US 5,206,866 AGranted

Bit error correcting circuit for a nonvolatile memory

AssigneeOki Electric Industry Co., Ltd.

InventorKoji Tanagawa

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Abstract

A bit correction circuit for a nonvolatile memory is connected between a non-volatile memory and a control circuit such as a microcomputer. The nonvolatile memory has a plurality of sets of memory cells. Each set comprises plurality of data cells for storing data and a parity cell for storing a parity bit. The bit error circuit comprises error checking circuit connected for receiving data read from the memory cells and the corresponding parity bit for checking the read data for an error and producing an error signal corresponding to the result of the error checking, holding and sense voltage switching circuit connected to the error checking circuit for holding the error signal and having an output for outputing a holding signal corresponding to the error signal until the next read operation is carried out, the holding signal being coupled for controlling the sense voltage of the nonvolatile memory, and address holding circuit having an input for receiving an address of the read data and connected to the holding and sense voltage switching circuit for holding the address of the read data in response to the holding signal for use the next read operation of the read data if an error in the read data is detected.

Claims7

Dependent claims

An arrangement comprising a bit error correcting circuit connected to a non-volatile memory and a control circuit, the non-volatile memory having a plurality of sets of memory cells each of which has a plurality of data cells for storing data and a parity cell for storing a first parity bit corresponding to the data and a sense amplifier circuit connected to the sets of memory cells for sensing data with a plurality of sense voltages, the control circuit outputting first and second read signals in respective read cycles, the bit error correcting circuit comprising:

a parity bit generating circuit connected to the non-volatile memory and the control circuit for generating a second parity bit generated from the stored data read from the data cells in response to the first read signal;
a comparison circuit connected to the parity bit generating circuit and the non-volatile memory for comparing the first and second parity bits and outputting a comparison signal which corresponds to the result of the comparison:
a data holding and sense voltage switching circuit connected to the comparison circuit, the control circuit and the non-volatile memory for holding the comparison signal and outputting a holding signal until the second read signal is received, the holding signal controlling sense voltage of the sense amplifier circuit;
and
an address holding circuit connected to the control circuit, the non-volatile memory and the data holding and sense voltage switching circuit for holding and outputting an address signal from the control circuit to the non-volatile memory in response to the holding signal.

2 more elements

A bit error correcting system operated by first and second read signals generated during respective read cycles of a control circuit, comprising:

a non-volatile memory having a memory cell array having a plurality of sets of memory cells, each set of memory cells including a plurality of data cells for storing data and a parity cell for storing a first parity bit corresponding to the data, a selection circuit connected to the memory cell array for selecting a predetermined set of memory cells, and a sense amplifier circuit connected to the memory cell array for sensing data with a plurality of sense voltages;
a parity checking circuit connected to the memory cell array for checking a second parity bit generated from the stored data read from the predetermined set of memory cells in response to the first read signal and outputting an error signal;
a data holding circuit connected to the parity checking circuit and the sense amplifier circuit for holding the error signal and outputting a holding signal corresponding to the held error signal until the second read signal is received, the holding signal controlling the sense voltage of the sense amplifier circuit;
and
an address holding circuit connected to the data holding circuit and the selection circuit for holding and outputting the address signal to the selection circuit in response to the holding signal.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/612,978Filed 15 Nov 1990
Priority: JP 1-29865416 Nov 1989
Granted: 27 Apr 1993
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

G06F 11/1008
Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's: in individual solid state devices
G06F 11/1076
Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's: parity data used in redundant arrays of…
G06F 11/141
At machine instruction level: for bus or memory accesses
G06F 11/10
Error detection or correction by redundancy in data representation, e.g. by using checking codes: adding special bits or symbols to the coded…