Series ferroelectric capacitor structure for monolithic integrated circuits and method
AssigneeRamtron Corporation
InventorsWilliam Larson, Thomas Davenport, Constance DeSmith
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Abstract
A ferroelectric capacitor for a memory device including a substrate, a bottom electrode and a top electrode. Between the bottom and top electrodes is either an alternating plurality of layers of ferroelectric material and intermediate electrodes or a plurality of layers of ferroelectric material. A method for forming the same through establishing one layer over the other is also disclosed.
Claims30
A ferroelectric capacitor comprising:
- a substrate;
- a bottom electrode over said substrate;
- a first layer of a ferroelectric material over said bottom electrode;
- an intermediate electrode over said first layer of ferroelectric material;
- a second layer, distinct from said first layer, of ferroelectric material, said second layer being located over said intermediate electrode;
- and
- a top electrode over said second ferroelectric material.
A ferroelectric capacitor comprising:
- a substrate;
- a bottom electrode over said substrate;
- an alternating plurality of distinct layers of ferroelectric material and intermediate electrodes located over said bottom electrode;
- another layer, distinct from said layers of ferroelectric material, of ferroelectric material, said another layer being located over said alternating plurality of layers;
- and
- a top electrode over said another layer of ferroelectric material.
A ferroelectric capacitor comprising:
- a substrate;
- a bottom electrode over said substrate;
- a plurality of layers of ferroelectric material over said bottom electrode, each of said plurality of layers located directly over each other;
- and
- a top electrode over said plurality of layers of ferroelectric material.
A method for forming a ferroelectric capacitor comprising the steps of:
- forming a substrate;
- establishing a bottom electrode over said substrate;
- establishing a first layer of ferroelectric material over said bottom electrode;
- establishing an intermediate electrode over said layer of ferroelectric material;
- establishing a second layer of ferroelectric material, distinct from said first layer, over said intermediate electrode;
- and
- establishing a top electrode over said second layer of ferroelectric material.
A method for forming a ferroelectric capacitor comprising the steps of:
- forming a substrate;
- establishing a bottom electrode over said substrate;
- establishing a plurality of layers of ferroelectric material over said bottom electrode, each of said plurality of layers being located directly over one another;
- and
- establishing a top electrode over said layers of ferroelectric material.
Dependencies are inferred from the claim text.