Drain bias circuit for high power microwave field effect transistors (FETS) having internal matching
AssigneeAgence Spatiale Europeenne
InventorFrancisco T. Torres
Life of this patent
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Abstract
A drain bias circuit for a high power FET having internal matching (10) for use in an amplifier operating in the microwave range. The circuit is characterized in that it comprises a transmission line constituted by a low impedance microstrip (20) of length .lambda.g/2 at the normal operating frequency, where .lambda.g is the length of the wave guided by the microstrip (20), and two RF choke coils (9a, 9b) which are connected to the center of the above-mentioned low impedance microstrip transmission line (20), thereby splitting the path of the drain current (I.sub.D) into two, which current is thus conveyed to the center of said transmission line, thus making it possible to maintain a load of 50.OMEGA. while ensuring that the FET (10) is properly biased.
Claims2
A drain bias circuit for a high power FET having internal matching for use in an amplifier operating in the microwave range, said FET having a gate electrode, a source electrode and a drain electrode, the circuit comprising:
- a transmission line constituted by a low impedance microstrip of length .lambda.g/2 at a normal operating frequency, where .lambda.g is the length of a wave guided by the microstrip, one end of the transmission line being connected to the drain electrode;
- and
- two RF choke coils which are connected to the center of the low impedance microstrip transmission line, and to a bias power source, each choke coil transmitting half of the drain current to the center of said transmission line, thus making it possible to maintain a load of 50.OMEGA. while ensuring that the FET is properly biased.
A drain bias circuit for a high power FET having internal matching for use in an amplifier operating in the microwave range, said FET having a gate electrode, a source electrode and a drain electrode, the circuit comprising:
- a transmission line having a low impedance microstrip of length .lambda.g/2 where .lambda.g is the wavelength of waves travelling on the microstrip, one end of the transmission line being connected to the drain electrode, the microstrip having a center;
- and
- first and second RF choke coil means each for sending one-half of a drain bias current of the FET from a bias current source means to the center of the microstrip.
Dependencies are inferred from the claim text.