Semiconductor device structure
AssigneeSeiko Epson Corporation
InventorIsamu Namose
Life of this patent
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Abstract
A semiconductor device composed of a substrate provided with a groove filled with insulating material to define an element isolating region. The groove corners are rounded and the substrate contains impurity material below the groove and in a region adjacent the groove. The impurity material is introduced to have essentially the same impurity density profile below the bottom of the groove and below the substrate surface in the region adjacent the groove. The device may additionally be provided, if the region below and adjacent the groove is of P-type conductivity, with a buried P-type layer which opposes penetration of .alpha. particle radiation into the substrate.
Claims13
A semiconductor device comprising a substrate of semiconductor material, said substrate having a surface, at least one groove extending into said substrate from said surface, and an active region adjacent at least one said groove and having a semiconductor circuit element constituted by an MOS transistor;
- an isolator at least partially filling said groove to form an element isolating region;
- and an impurity material imbedded in said substrate at said active region and below at least a part of said groove which is adjacent said active region;
- wherein said impurity material has an impurity density profile in said active region, starting from said surface, and an impurity density profile below said part of said groove, starting from the bottom of said groove, and said two impurity density profiles are substantially identical to one another.
A semiconductor device comprising:
- a substrate of semiconductor material, said substrate having a surface, at least one groove extending into said substrate from said surface, and an active region adjacent at least one said groove and having a semiconductor circuit element constituted by an MOS transistor, said substrate having P-type conductivity in said active region and below at least part of said groove which is adjacent said active region;
- an insulator at least partially filling said at least one groove to form an element isolating region;
- and a buried layer of P-type conductivity material disposed below said surface of said substrate in said active region and below at least said portion of said groove which is adjacent said active region for opposite penetration of .alpha. particle radiation into said substrate.
Dependencies are inferred from the claim text.