Photocell
AssigneeSiemens Aktiengesellschaft
InventorsSiegfried Birkle, Johann Kammermaier, Gerhard Rittmayer
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Abstract
In the case of a photocell based on gallium arsenide or indium phosphide, a layer of amorphous, hydrogenous carbon (a-C:H) having a thickness of .ltoreq.0.1 .mu.m and a specific electrical resistance of .gtoreq.10.sup.6 .OMEGA..cm is placed on a layer of p-doped gallium arsenide (GaAs) or indium phosphide (InP).
Claims12
In a photocell based on gallium arsenide or indium phosphide, having a layer of p-doped gallium arsenide (GaAs) or indium phosphide (InP), the improvement comprising a layer of amorphous, hydrogenated carbon (a-C:H) having a thickness of .ltoreq.0.1 .mu.m and a specific electrical resistance of .gtoreq. 10.sup.6 .OMEGA..cm disposed on the p-doped layer.
Dependencies are inferred from the claim text.