Electron beam lithographic method
AssigneesHitachi, Ltd., Hitachi Instrument Engineering Co., Ltd.
InventorsYukinobu Shibata, Ikuo Takada, Akira Hirakawa, Tadao Konishi
Life of this patent
Estimating the term…
Abstract
An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.
Claims6
An electron beam lithographic method in which a sample is irradiated with an electron beam and is lithographed by deflecting and turning on/off the electron beam, comprising the steps of:
- obtaining an extreme point of a curve of a lithographic pattern;
- dividing a lithographic area adjacent the curve into a first region completely surrounded by straight lines parallel to an x-axis and a y-axis of said lithographic pattern, the extreme point being on at least one of the straight lines, and second regions not including said first region.
An electron beam lithographic apparatus in which a sample is irradiated with an electron beam and is lithographed by deflecting and turning on/off the electron beam, comprising:
- means for obtaining an extreme point of a curve of a lithographic pattern;
- and
- means for dividing a lithographic area adjacent the curve into a first region completely surrounded by straight lines parallel to an x-axis and a y-axis of said lithographic pattern, the extreme point being on at least one of the straight lines, and second regions not including said first region.
Dependencies are inferred from the claim text.