Low energy, steered ion beam deposition system having high current at low pressure
AssigneeInternational Business Machines Corporation
InventorsJohn H. Keller, Dennis K. Coultas
Life of this patent
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Abstract
An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.
Claims40
An ion beam deposition apparatus for producing low temperature epitaxial growth of a semiconductor material including at least a first ion source, said ion source providing a particular pattern, said ion beam deposition apparatus including
- a magnet means having means for mass-analyzing an ion beam from at least said first ion source including means for focussing said particular pattern in at least one plane into a pattern of high aspect ratio at a focal or crossover point located prior to a target.
An ion beam deposition apparatus for producing low temperature epitaxial growth of a semiconductor material including at least a first ion source including
- a magnet means having means for mass-analyzing an ion beam from at least said first ion source including means for focussing said ion beam into a pattern of high aspect ratio, and
- means for confining a plasma occurring within said magnet means.
An ion beam deposition apparatus for producing low temperature epitaxial growth of a semiconductor material including at least a first ion source including
- a magnet means having means for mass-analyzing an ion beam from at least said first ion source including means for focussing said ion beam into a pattern of high aspect ratio, and
- means, independent of said ion beam, for producing a plasma from background gas within said magnet means.
A method of depositing a material on a surface by ion deposition of a material from an ion beam from at least one ion source providing a particular pattern including the step of
- simultaneously mass analyzing and focussing said particular pattern in at least one plane at a focal or crossover point located prior to a target plane with a single magnet means having an arcuate ion optical axis.
An apparatus for producing an ion beam within a volume of ionizable gas at high vacuum, a predetermined fraction of said ionizable gas being ionized by said ion beam including
- means for increasing the concentration of electrons available for space charge neutralizing said ion beam from said ionizable gas.
Dependencies are inferred from the claim text.