Process for producing an amorphous photoelectric transducer

Abstract

An amorphous photoelectric transducer of the type that converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side is disclosed. The p-type amorphous semiconductor film is formed with gaseous boron trifluoride (BF.sub.3) as a dopant, the film containing boron atoms at a concentration in the range of 1.times.10.sup.20 -2.times.10.sup.21 atoms/cm.sup.3, and the concentration of fluorine atoms in the film being no more than one half of the concentration of boron atoms. A process for producing an amorphous photo-electric transducer is also disclosed, wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition (CVD) technique which decomposes a feed gas including gaseous boron trifluoride (BF.sub.3) as a dopant.

Dependencies are inferred from the claim text.