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AssigneesToyoda Gosei Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyusho
InventorsMasahiro Kotaki, Katsuhide Manabe, Masaki Mori, Masafumi Hashimoto
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A dry etching method for Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.1) semiconductor uses plasma of a boron trichloride (BCl.sub.3) gas. The etching rate of the method is 490 .ANG./min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl.sub.3 gas. After etching with the plasma of a BCl.sub.3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al.sub.x Ga.sub.1-x N; 0.ltoreq.x<1), an i-layer, an electrode formed on the etched surface of the n-layer through a through hole, the through hole being formed through the i-layer to the n-layer by the dry etching with the plasma of the born trichloride (BCl.sub.3) gas and being successively etched by the plasma of an inert gas, and an electrode formed on the surface of said i-layer.
A dry etching method for forming an etched surface to make an ohmic contact on semiconductor comprising the steps of:
A method for forming an ohmic contact on semiconductor comprising the steps of:
A dry etching method for etching semiconductors comprising the steps of:
A dry etching method for etching semiconductors comprising the steps of:
A dry etching method for etching semiconductors comprising the steps of:
Dependencies are inferred from the claim text.