Monocrystalline germanium film on sapphire
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsDavid J. Godbey, Syed B. Qadri
Life of this patent
Estimating the term…
Abstract
A monocrystalline germanium film is grown on a sapphire substrate with a (1102) orientation. The substrate is first pretreated to restructure the (1102) surface plane. Typically, restructuring is accomplished by either an anneal at high temperature or ion bombardment. A monocrystalline germanium layer is grown on the pretreated surface by a vapor deposition process such as molecular beam epitaxy or chemical vapor deposition.
Claims22
A germanium on sapphire substrate for a semiconductor device, comprising:
- a single crystal sapphire substrate which has a surface with an index of plane (1102);
- and
- an epitaxial monocrystalline germanium layer on said surface of the sapphire substrate.
A process for the production of a monocrystalline germanium layer on the r-plane of an .alpha.- alumina substrate, comprising the steps of:
- pretreating said .alpha.-alumina substrate to significantly restructure said r-plane surface thus rendering said r-plane surface capable of supporting the epitaxial growth of germanium thereon;
- vapor depositing a monocrystalline layer of germanium on said r-plane of said pretreated substrate.
The process of 7, wherein said vapor depositing step comprises molecular beam epitaxy or chemical vapor deposition.
Dependencies are inferred from the claim text.