Memory cell with capacitance for single event upset protection
AssigneeTexas Instruments Incorporated
InventorsTerence G. W. Blake, Theodore W. Houston
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Abstract
A compact capacitor for use in a small memory cell in high density memories is disclosed. Such a capacitor in the cross-coupling of cross-coupled inverters in the memory cell improves single event upset hardness. The subject capacitor in its preferred embodiment is a MOS capacitor with both n+ and p+ connections to the capacitor channel so as to maintain a relatively high capacitance for both positive and negative capacitor gate voltages.
Claims12
A memory cell including a pair of cross-coupled inverters and further including a MOS capacitor connected across the cross-couplings of said pair of inverters, said MOS capacitor including a gate region, a channel region and a source region comprising both heavily doped n-type semiconductor material and heavily doped p-type semiconductor material connected to said channel region.
Dependencies are inferred from the claim text.