MOS semiconductor device having a surge protecting element
AssigneeFuji Electic Co., Ltd.
InventorKenya Sakurai
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Abstract
A MOS semiconductor device having a surge protecting circuit comprising a semiconductor substrate having a major surface, a plurality of electrodes overlying the major surface, a MOS circuit in the major surface, and a bidirectional semiconductor surge absorber coupled between the gate of the MOS circuit and a reference electrode contacting the major surface of the substrate. In another embodiment, the MOS semiconductor device further comprises a bidirectional Zener diode connected in series with the bidirectional semiconductor surge absorber.
Claims35
A MOS semiconductor device having a surge protecting circuit, comprising:
- a semiconductor substrate having a major surface;
- a plurality of electrodes overlying said major surface;
- a MOS circuit in said major surface;
- a bidirectional semiconductor surge absorber, coupled between the gate of said MOS circuit and a reference one of said electrodes contacting said major surface of the substrate;
- and
- a bidirectional Zener diode connected in series with said bidirectional semiconductor surge absorber.
A MOS semiconductor device having a surge protecting circuit, comprising:
- a semiconductor substrate having a major surface, wherein said semiconductor substrate includes,
- a first semiconductor layer of a first conductivity type adjacent said major surface;
- one or more first regions of a second conductivity type selectively in the surface of said first semiconductor layer, said second conductivity type being different from the first conductivity type;
- and
- one or more second regions of the first conductivity type being selectively in the surface of said first region;
- a plurality of electrodes overlying said major surface;
- a MOS circuit in said major surface;
- and
- a bidirectional semiconductor surge absorber, coupled between the gate of said MOS circuit and a reference one of said electrodes contacting said major surface of the substrate, wherein said reference electrode contacts said first and second regions.
A MOS semiconductor device having a surge protecting circuit, comprising:
- a semiconductor substrate having a major surface;
- a plurality of electrodes overlying said major surface;
- a MOS circuit in said major surface;
- a bidirectional semiconductor surge absorber, coupled between the gate of said MOS circuit and a reference one of said electrodes contacting said major surface of the substrate, wherein said bidirectional semiconductor surge absorber includes,
- a first semiconductor layer of a first conductivity type overlying said major surface;
- one or more base regions of a second conductivity type selectively throughout the said first semiconductor layer, said second conductivity type being different from the first conductivity type;
- and
- one or more diffusion regions of the first conductivity type selectively formed in the surface of said base region.
Dependencies are inferred from the claim text.