High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a transistor formed in said semiconductor substrate, said transistor including emitter and base regions formed in said substrate;
• a resistor layer formed in an area of said substrate laterally spaced from said emitter region;
• first electrode means, connected to said resistor layer, for splitting a current into a first branch current and a second branch current and for supplying both said first branch current and said second branch current to said resistor layer, said first electrode means having a first end including a first extending finger portion connected to said resistor layer for transmitting said first branch current and a second extending finger portion spaced from the first finger portion connected to said resistor layer for transmitting said second branch current, and having a second end contiguous with the first end, whereby the current density of the current flowing through said resistor layer is reduced;
• and
• second electrode mans having a first end including spaced extending finger portions disposed between and engaged interdigitally with the first and second finger portions of said first electrode means, and having a second end contiguous with the first end, said finger portions of said second electrode means being connected to said resistor layer, for receiving both said first branch current and said second branch current.

A semiconductor device comprising:

• a semiconductor substrate;
• a transistor formed in said semiconductor substrate, said transistor including emitter and base regions formed in said substrate;
• a resistor layer formed in an area of said semiconductor substrate;
• an emitter electrode connected to said emitter region and including a first end with an interdigital structure connected to said resistor layer and a second end contiguous with the first end;
• and
• a wiring side electrode having an interdigital structure corresponding to the interdigital structure of said emitter electrode, said wiring side electrode connected to said resistor layer by said interdigital structure of said wiring side electrode.