Method of growth II-VI semiconducting compounds
AssigneeSharp Kabushiki Kaisha
InventorsMasahiko Kitagawa, Yoshitaka Tomomura
Life of this patent
Estimating the term…
Abstract
A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.
Claims4
A method of expitaxially growing a single crystal film of a II-VI semiconducting compound on a substrate characterized in that a single crystal of a II-VI semiconducting compound grown by a chemical transport method with a halogen as the transport medium is used as said substrate wherein the halogen is selected from the group consisting of chlorine, bromine and fluorine and the substrate is subjected to a heat treatment so as to reduce halogen density inside the substrate.
A method of epitaxially growing a single crystal film of a II-VI semiconducting compound on a substrate characterized in that a single crystal of a II-VI semiconducting compound is grown by a chemical transport method with iodine as the transport medium being used as the substrate, wherein the substrate contains iodine in an amount in the range of from 10-1000 ppm.
Dependencies are inferred from the claim text.