Thick film resistor composition, hybrid IC using the composition, and process for producing the hybrid IC

A thick film resistor composition which contains a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.

A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit, wherein the thick film resistor is a sintered body of a composition comprising 100 parts by weight of a mixture of a metal boride and a glass and at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt.

A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit wherein the thick film resistor is a sintered body of a composition comprising a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.