Method of manufacturing an aluminum nitride structure
AssigneeKabushiki Kaisha Toshiba
InventorsMitsuo Kasori, Akihiro Horiguchi, Yoshiko Goto, Fumio Ueno
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AssigneeKabushiki Kaisha Toshiba
InventorsMitsuo Kasori, Akihiro Horiguchi, Yoshiko Goto, Fumio Ueno
Estimating the term…
An aluminum nitride structure is prepared by placing an oxygen-trapping substance at at least one position on an aluminum nitride substrate having a first concentration of solution oxygen, and heating the resultant structure in a non-oxidizing atmosphere to locally reduce the first concentration of solution oxygen in said aluminum nitride substrate under said oxygen-trapping substance to a second concentration of solution oxygen by trapping the solution oxygen in the oxygen-trapping substance, thereby forming an aluminum nitride structure in which at least one region of the aluminum nitride structure corresponding to the position of said oxygen-trapping substance, which position has said second oxygen concentration, is integrally formed with aluminum nitride regions having said first concentration of solution oxygen. The aluminum nitride structure of the present invention exhibits anisotropic physical properties.
A method of manufacturing an aluminum nitride structure, comprising the steps of:
Dependencies are inferred from the claim text.