Highly purified titanium material and its named article, a sputtering target
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Ishigami, Mituo Kawai, Noriaki Yagi
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AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Ishigami, Mituo Kawai, Noriaki Yagi
Estimating the term…
The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.
A highly purified Ti material comprising:
Dependencies are inferred from the claim text.