Method for performing in-situ etch of a CVD chamber
AssigneeLSI Logic Corporation
InventorKeith J. Hansen
Life of this patent
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Abstract
During the cleaning of CVD chamber walls with an etch gas of NF.sub.3, the reaction chamber walls are heated to above 65.degree. C. while maintaining a relatively low chamber pressure during etching of the chamber with NF.sub.3. Any reaction of the NF.sub.3 with the quartz (SiO.sub.2) walls of the chamber, and with any reaction by-products remaining in the chamber, will not condense on the walls of the chamber, since, at this relatively high temperature, these reaction products will be volatile and will be purged away with the NF.sub.3.
Claims4
A method of performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber comprising the steps of:
- heating walls of said chamber in said cold-wall type processing system to a temperature of between approximately 65.degree. C. and approximately 90.degree. C.;
- injecting fluorine-based etching gas into said chamber;
- and
- supplying RF power to energize said etching gas to etch said walls of said chamber.
Dependencies are inferred from the claim text.