Method of forming field emitter device with diamond emission tips
AssigneeMicroelectronics and Computer Technology Corporation
InventorNalin Kumar
Life of this patent
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Abstract
A field emitter device comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The device is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.
Claims18
A method of fabricating a field emitter device, comprising the following steps in the sequence set forth:
- providing a substrate;
- coating said substrate with a diamond film having negative electron affinity and a top surface with spikes and valleys;
- depositing a conductive metal on said diamond film;
- and
- etching the conductive metal to expose the portions of said spikes without exposing said valleys, thereby forming diamond emission tips which protrude above said conductive metal.
A method of fabricating a field emitter device, comprising the steps of:
- providing a substrate;
- depositing an insulating diamond film on said substrate, said diamond film having a negative electron affinity and a top surface with spikes and valleys;
- depositing a layer of conductive metal on said diamond film;
- etching said conductive metal to cause portions of said conductive metal above said spikes to be removed to expose the tops of said spikes without exposing said valleys, thereby forming diamond emission tips which extend above said conductive metal a height less than the mean free path of electrons in said diamond film;
- and
- forming an ohmic contact between said conductive metal and said diamond film.
A method of fabricating a field emitter device, comprising the following steps in the sequence set forth:
- providing a substrate;
- applying chemical vapor deposition to coat said substrate with an insulating diamond film having a (111) orientation, negative electron affinity and a top surface with spikes and valleys;
- sputter depositing a conductive metal on said diamond film;
- and
- applying ion milling to etch said conductive metal to expose the tops of said spikes without exposing said valleys to form emission tips which protrude above the non-etched conductive metal a height less than the mean free path of electrons in said diamond film.
Dependencies are inferred from the claim text.