Method of making a MOS thin film transistor with self-aligned asymmetrical structure
AssigneeSharp Kabushiki Kaisha
InventorAlberto O. Adan
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Abstract
A semiconductor thin film formed over a substrate and having drain and source regions each being of a conductivity type and a channel region of another conductivity type defined between the drain and source regions, a gate electrode(s) formed over and/or below the channel region of the semiconductor thin film through an insulating layer(s), a pair of electrodes being connected to the drain and source regions of the semiconductor thin film, in which said source region is placed in a self-aligned manner and adjoined to said channel region, while a drain-offset region is defined between said channel region and said drain region in a self-aligned manner.
Claims9
A method of making a thin film transistor having a self-aligned asymmetrical structure, said method comprising:
- forming a semiconductor thin film over a substrate, said thin film being formed to include a drain region, a channel region and a partial source region, said drain and partial source regions being of one conductivity type and said channel region being of another conductivity type;
- forming a gate electrode over said channel region and a pair of electrodes including a drain electrode and a source electrode, said drain electrode being concurrently formed with the formation of said gate electrode by the same layer forming said gate electrode, whereby a drain-offset region is formed between said gate electrode and drain electrode;
- completing the formation of the source region in a self-aligned manner by ion implantation using said source electrode and gate electrode as a mask.
Dependencies are inferred from the claim text.