Substrate for packaging a semiconductor device having particular terminal and bump structure
AssigneeSumitomo Electric Industries, Ltd.
InventorsMasanori Nishiguchi, Atsushi Miki
Life of this patent
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Abstract
A substrate for packaging a semiconductor device having a bump thereon according to the present invention is characterized by that the substrate has an electrode terminal to which the bump is to be connected, the electrode terminal has a recess formed thereon to the receive at least a top of the bump, and at least a top of the surface of the electrode terminal is covered by a metal layer having a lower melting point than that of the bump.
Claims15
A substrate arrangement for packaging a semiconductor device having a bump projecting from a surface thereof comprising:
- a substrate element;
- an electrode terminal formed on said substrate element, said electrode terminal having a recess for receiving at least a top of said bump, a depth of said recess increases as it goes from a periphery to a center;
- and
- a conductive member of a lower melting point than that of the peripheral portion of said electrode is formed at the central portion of the recess of said electrode terminal.
A substrate arrangement for packaging a semiconductor device having a bump projecting from a surface thereof,
- a substrate element, said substrate element having a recess for receiving at least a top of said bump;
- an electrode terminal formed in said recess of said substrate element, said electrode terminal having a recess, a central portion of said electrode terminal is made of a material having a lower melting point than that of a material of a peripheral portion of said electrode.
A packaging structure of a semiconductor device comprising:
- a semiconductor device having a bump projecting from a surface thereof;
- a substrate element;
- and
- an electrode terminal formed on said substrate element, said electrode terminal having a recess for receiving at least a top of said bump, said electrode terminal further including a conductive material of a lower melting point than that of said bump,
- wherein said conductive material is formed at a central portion of said recess and a member of a higher melting point than that of said conductive material is formed in a peripheral portion of said recess.
A packaging structure of a semiconductor device comprising:
- a packaging substrate having a bump projecting from a surface thereof;
- a semiconductor device;
- an electrode pad formed on said semiconductor device said electrode pad having a recess for receiving at least a top of said bump;
- and
- a conductive material of a lower melting point than that of said bump is formed on said recess.
A packaging structure of a semiconductor device comprising:
- a semiconductor device having a bump projecting from a surface thereof;
- a substrate element;
- and
- an electrode terminal formed on said substrate element, said electrode terminal having a recess for receiving at least a top of said bump, said electrode terminal further including a conductive material of a lower melting point than that of said bump,
- wherein a depth of said recess increases from a periphery to a center, said recess being substantially sphere shaped having a larger radius of curvature than that of said top of said bump, and the central portion of said electrode terminal is made of a conductive member having a lower melting point than that of the peripheral portion of said electrode terminal.
Dependencies are inferred from the claim text.