# US 5,196,285 A · Method for control of photoresist develop processes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,196,285 A - Document ID: US5196285A - Status: Granted - Kind: A - Application number: 07/526,639 - Filed: 1990-05-18 - Granted: 1993-03-23 - Earliest claimed: 1990-05-18 - Assignees: Xinix, Inc. - Inventors: Mariste A. Thomson - Web page: https://patentgrep.com/patent/US5196285A ## CPC - G03F 7/30: Imagewise removal using liquid means - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for the control of photoresist develop processes employing multiple spray-puddle steps in which process changes other than time, such as endpoint are used to determine the length of the spray and puddle steps. ## Claims ### Claim 1 A method of developing a layer of photoresist material, comprising the steps of: applying a developer solution onto the photoresist layer, thereafter allowing at least some of the applied developer solution to remain on the photoresist layer, while the developer solution remains on the photoresist layer, monitoring the development process in a manner to determine when the photoresist layer is first developed completely therethrough, applying fresh developer solution onto the photoresist layer in a direct response to said determination, thereafter allowing at least some of the applied fresh developer solution to remain on the photoresist layer, and terminating action of the developer solution on the photoresist layer at a controlled time after application of the fresh developer solution, whereby the photoresist development is completed after said controlled time. ### Claim 2 (depends on 1) The method according to claim 1 wherein the step of applying fresh developer solution is commenced substantially immediately after development of the photoresist layer completely therethrough is determined during the development process monitoring step. ### Claim 3 (depends on 2) The method according to claim 2 wherein said controlled time of the termination step is caused to be related to a period extending from the first application of developer solution until the photoresist layer has been developed completely therethrough. ### Claim 4 (depends on 2) The method according to claim 2 wherein said controlled time of the termination step is caused to be substantially equal to a period extending from the first application of developer solution until the photoresist layer has been developed completely therethrough. ### Claim 5 (depends on 1) The method according to claim 1 wherein said controlled time of termination step is caused to be related to a period extending from the first application of developer solution until the photoresist layer has been developed completely therethrough. ### Claim 6 (depends on 1) The method according to claim 1 wherein the steps of applying a developer solution and applying fresh developer solution each include the step of spraying their respective solutions onto the photoresist layer. ### Claim 7 (depends on 6) The method according to claim 6 wherein each of the spraying steps includes spraying their respective solutions onto the photoresist layer for predetermined fixed periods of time. ### Claim 8 (depends on 2, 3, 4, 5) The method according to any one of claims 2-5 wherein the steps of applying a developer solution and applying fresh developer solution each include the step of spraying their respective solutions onto the photoresist layer. ### Claim 9 (depends on 1, 2, 3, 4, 5, 6, 7) The method according to any one of claims 1-7 wherein the monitoring step includes the steps of: directing light against the photoresist layer, thereby to result in light reflected therefrom, and determining when the photoresist layer is first developed completely therethrough by observing the reflected light. ### Claim 10 (depends on 1, 2, 3, 4, 5, 6, 7) The method according to any one of claims 1-7 wherein the monitoring step includes the steps of: observing a time variation of an intensity of an interference pattern in light reflected from the photoresist layer and a surface thereunder, and determining when the photoresist layer is first developed completely therethrough by observing when said light intensity time variation ends. ### Claim 11 (depends on 1, 2, 3, 4, 5, 6, 7) The method according to any one of claims 1-7 wherein said photoresist layer has been exposed to an optical pattern prior to the application of a developer solution thereto, whereby the photoresist layer is developed completely therethrough in accordance with said optical pattern. ### Claim 12 (depends on 1, 2, 3, 4, 5, 6, 7) The method according to any one of claims 1-7 wherein the terminating step includes the step of rinsing the developer solution from the photoresist layer. ### Claim 13 (depends on 1, 2, 3, 4, 5, 6, 7) The method according to any one of claims 1-7 wherein said photoresist material layer is carried by a semiconductor substrate.