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US 5,194,398 AGranted
Semiconductor film and process for its production
AssigneeMitsui Toatsu Chemicals, Inc.
InventorsKenji Miyachi, Nobuhiro Fukuda, Yoshinori Ashida, Masato Koyama
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Abstract
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.
Claims30
A method for forming an amorphous semiconductor film, which comprises the sequential steps of:
- (a) forming a silicon or silicon alloy semiconductor film having not more than 20 atomic percent of bound hydrogen, and then (b) modifying the formed film by exposing said film to a discharge atmosphere containing a non-film-forming reactive gas or a monovalent ion or atomic hydrogen, the sequence of steps being repeated multiple times, the thickness of the semiconductor film formed by one formation/modification cycle being in the range of from 10 to 1000 A. t
A method of forming an amorphous semiconductor film, which comprises the sequential steps of:
- (a) forming a silicon semiconductor film having not more than 20 atomic percent of bound hydrogen, and
- (b) de-halogenating/hydrogenating the formed film,
- the sequence of steps (a) and (b) each being repeated multiple times, the thickness of the semiconductor film formed by one formation/modification cycle being in the range of from 10 to 1000 .ANG.,
Dependencies are inferred from the claim text.