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US 5,194,395 AGranted
Method of producing a substrate having semiconductor-on-insulator structure with gettering sites
AssigneeFujitsu Limited
InventorKunihiko Wada
Life of this patent
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Abstract
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
Claims12
A method of producing a substrate having a semiconductor-on-insulator structure comprising the steps of:
- preparing a stacked structure having a base substrate and an insulator layer formed thereon;
- forming an active substrate on the insulator layer of said stacked structure, said active substrate having gettering sites;
- and
- forming an active layer on said active substrate, said active layer being made of a semiconductor.
1 more element
Dependencies are inferred from the claim text.