Method of controlling the domain of a nonlinear ferroelectric optics substrate

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode or the second electrode being formed in a given electrode pattern;
• and
• applying a given pulse voltage across the first and second electrodes to form local continuously alternating inverted domains in a pattern corresponding to the electrode pattern where the local inverted domains alternately have a constant, opposite, polarization direction.

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode or the second electrode being formed in a given electrode pattern on an insulating layer formed on the corresponding major surface of the nonlinear ferroelectric optics substrate;
• and
• applying a given dc voltage across the first and and second electrodes to form local, inverted domains in a pattern corresponding to the electrode pattern.

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode or the second electrode being formed in a give electrode pattern on an insulating layer formed on the corresponding major surface of the nonlinear ferroelectric optics substrate;
• and
• applying a given pulse voltage across the first and second electrodes to form local, inverted domains in a pattern corresponding to the electrode pattern.

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode or the second electrode being formed in a given electrode pattern:
• applying a given dc voltage across the first and second electrodes to form local inverted domains in a pattern corresponding to the electrode pattern, and, wherein the dc voltage is in the range of several tens volts per centimeter to several hundreds volts per centimeter.

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode or the second electrode being formed in a given electrode pattern;
• applying a given dc voltage across the first and second electrode to form local inverted domains in a pattern corresponding to the electrode pattern, and, wherein said given electrode pattern comprises a plurality of parallel strips and the pitch of the strips forming the electrode pattern is in the range of 0.1 to 500 .mu.m.

A method of controlling the domain of a nonlinear ferroelectric optics substrate, comprising:

• forming a first electrode and a second electrode opposite to each other respectively on the opposite major surfaces of a single-domain nonlinear ferroelectric optics substrate, at least either the first electrode of the second electrode being formed in a given electrode pattern;
• applying a given pulse voltage across the first and second electrodes to form local inverted domains in a pattern corresponding to the electrode pattern, and, wherein said given electrode pattern comprises a plurality of parallel strips and the pitch of the strips forming the electrode pattern is in the range of 0.1 to 500 .mu.m.