MOSFET oscillator for supplying a high-power RF inductive load
AssigneeLepel Corp.
InventorMelvin Rossnick
Life of this patent
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Abstract
A self-excited solid-state oscillator for supplying a high-power RF inductive load. The oscillator includes at least one MOSFET transistor connected in a self-excited oscillator configuration, an output tuned circuit including an inductive load and a tank circuit connected to the load, the tank circuit having a resonant frequency determined at least in part by the inductance of the load, an RF feedback transformer coupling the tank circuit to the gate of the MOSFET for providing a switching signal to the MOSFET for causing the MOSFET to alternate between the on state and the off state at a frequency equal to the resonant frequency of the tank circuit, and a bias circuit for superimposing a forward bias voltage on the switching signal.
Claims4
A self-excited solid-state oscillator for supplying a high-power RF inductive load, comprising
- (a) at least one MOSFET transistor connected in a self-excited oscillator configuration;
- (b) an output tuned circuit comprising an inductive load and a tank circuit connected to the load, the tank circuit having a resonant frequency determined at least in part by the inductance of the load;
- (c) an RF feedback transformer coupling the tank circuit to the gate of the MOSFET for providing a switching signal to the MOSFET for causing the MOSFET to alternate between the on state and the off state at a frequency equal to the resonant frequency of the tank circuit;
- and
- (d) bias circuit means for superimposing a forward bias voltage on the switching signal.
A power supply for supplying power to an inductive load, comprising
- (a) a source of input power,
- (b) a tank circuit for connection to said inductive load, the tank circuit having a resonant frequency determined at least in part by the inductance of said load,
- (c) at least one MOSFET transistor connected in a self-excited oscillator configuration between the source of input power and the load,
- (d) feedback means coupling the tank circuit to the gate of the MOSFET for providing a switching signal to the MOSFET for switching the MOSFET alternately between an on state and an off state at a frequency equal to the resonant frequency of the tank circuit,
- (e) pulse-width modulator means for modulating the switching signal to the MOSFET, and
- (f) bias circuit means for superimposing a bias voltage on the switching signal for biasing the MOSFET into its forward conduction region.
Dependencies are inferred from the claim text.