US 5,188,705 A · Method of semiconductor device manufacture

Abstract

Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., is adsorbed on the surface of the semiconductor device and aids in the selective sputtering of material to be impinged by the ion beam by enabling a chemical reaction at the material's surface. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside the focused ion beam system without presenting a toxic hazard. The low reactivity of the iodine enables a high degree of contrast in reaction between the area struck by the ion beam and adjoining areas whereby accurate micromachining can be accomplished.

Claims14

Dependent claims

The process of shaping features of a solid object comprising the steps of:

positioning said object within an enclosed chamber,
supplying iodine vapor within said chamber so that iodine is adsorbed directly on an exposed surface of said object for enabling chemical reaction between iodine and the material at said surface,
generating a focused ion beam, and
directing said ion beam toward said surface for removal through sputtering of a portion of said surface comprising the reaction products of iodine and surface material.

1 more element

Dependencies are inferred from the claim text.

Method of semiconductor device manufacture

Life of this patent

Method of semiconductor device manufacture

Life of this patent

Abstract

Claims14