Light emitting diode device and method for producing same

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, the n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined at an angle of at least 3.degree. from the crystallographic plane,
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,
• a first ohmic electrode formed on a portion of said p-type silicon carbide layer, and
• a second ohmic electrode formed on a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having first and second major surface opposite to each other;
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and
• a second ohmic electrode formed on at least a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type silicon carbide substrate having first and second major surfaces opposite each other, at least said first major surface being inclined from said crystallographic plane,
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and
• a second ohmic electrode having a smaller areal size than said first ohmic electrode and formed on said second major surface,
• said diode element having an approximately trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, whereby a greater part of light generated in said n-type silicon carbide layer is emitted from said diode element through said n-type silicon carbide substrate than through said p-type silicon carbide layer, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined from a {0001} crystallographic plane,
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and
• a second ohmic electrode formed on at least a portion of said second major surface,
• said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode element comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined at an angle of at least 3.degree. from a {0001} crystallographic plane,
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem,
• a first ohmic electrode formed on a portion of said p-type silicon carbide layer, and
• a second ohmic electrode formed on a portion of said second major surface, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including
• an n-type silicon carbide substrate having first and second major surfaces opposite each other, at least said first major surface being inclined from a crystallographic plane of {0001} plane of the substrate,
• an n-type silicon carbide layer grown on said first major surface,
• a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and
• a second ohmic electrode having a smaller areal size than said first ohmic electrode and formed on said second major surface,
• said diode element having an approximately trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, whereby a greater part of light generated in said n-type silicon carbide layer is emitted from said diode element through said n-type silicon carbide substrate than through said p-type silicon carbide layer, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including:
• an n-type SiC substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <1010>
• from said crystallographic plane,
• an n-type SiC layer formed on said first major surface,
• a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type SiC layer,
• a second ohmic electrode formed on at least a portion of said second major surface, and
• said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including:
• an n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <1010>
• from a {0001} crystallographic plane,
• an n-type SiC layer formed on said first major surface,
• a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type SiC layer,
• a second ohmic electrode formed on at least a portion of said second major surface, and
• said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including:
• an n-type SiC substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, said n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <1120>
• from said crystallographic plane,
• an n-type SiC layer formed on said first major surface,
• a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type SiC layer,
• a second ohmic electrode formed on at least a portion of said second major surface, and
• said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device comprising:

• a light emitting diode element and a stem supporting said diode element, said diode element including:
• an n-type SiC substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined toward a direction of <1120>
• from a {0001} crystallographic plane,
• an n-type SiC layer formed on said first major surface,
• a p-type SiC layer formed on said n-type SiC layer, said p-type SiC layer having a side which faces said stem,
• a first ohmic electrode formed on at least a portion of said p-type SiC layer,
• a second ohmic electrode formed on at least a portion of said second major surface, and
• said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, said side of said p-type SiC layer being broader than said second major surface, said stem and said side of said p-type SiC layer being fixed to each other, said n-type SiC substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

A light emitting diode device, comprising:

• a silicon carbide substrate of a first conductivity type, the substrate having first and second major surfaces opposite each other;
• a first silicon carbide layer of the first conductivity type, the layer being grown on the first major surface;
• a second silicon carbide layer of a second conductivity type which differs from that of the first conductivity type, the second silicon carbide layer being grown on the first silicon carbide layer, the substrate being thicker than the second silicon carbide layer;
• a first ohmic electrode formed on at least a portion of the second silicon carbide layer;
• a second ohmic electrode formed on at least a portion of said second major surface;
• and
• supporting means for supporting said silicon carbide substrate, said first and second carbide layers, and said first and second ohmic electrodes, said supporting means including a stem, said first and second silicon carbide layers forming a junction therebetween which is closer to said stem than is said silicon carbide substrate, the silicon carbide substrate being thicker than the second silicon carbide layer, said first silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said first silicon carbide layer free of obstruction caused by said first ohmic electrode.