Oxide garnet single crystal

Abstract

A novel oxide garnet single crystal, which can be epitaxially grown on a rare earth-gallium garnet wafer and exhibiting excellent performance as a material of magneto-optical devices, is disclosed. The oxide garnet single crystal, grown on the substrate surface by the liquid-phase epitaxial method, has a chemical composition expressed by the formula (Bi.sub.a Eu.sub.b Ln.sub.1-a-b).sub.3 (Fe.sub.1-c M.sub.c).sub.5 O.sub.12, in which Ln is a rare earth element other europium, e.g. terbium, M is an element selected from the group consisting of aluminum, gallium, indium, and scandium, the subscript a is a positive number defined by 0.15.ltoreq.a.ltoreq.0.6, the subscript b is a positive number defined by 0.01.ltoreq.b.ltoreq.0.2 and the subscript c is a positive number defined by 0.01.ltoreq.c..ltoreq.0.1.

Dependencies are inferred from the claim text.