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AssigneeMicron Technology, Inc.
InventorsTrung T. Doan, Tyler A. Lowrey, David A. Cathey, J. Brett Rolfson
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A selective etching and chemical mechanical planarization process for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a first conformal layer, iii) deposited with a conductive material layer, iv) deposited with a second conformal insulating layer, v) deposited with a focus electrode ring material layer, vi) optionally deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose a portion of the second conformal layer, viii) etched to form a self-aligned gate and focus ring, and thereby expose the emitter tip, afterwhich xi) the emitter tip may be coated with a low work function material.
A process for the formation of self-aligned gate and focus ring structures around a cold cathode emitter tip, said process comprising the following steps:
The process according to claim wherein said first and second conformal insulating layers are selectively etchable with respect to said conductive material layer and said focus electrode layer.
A process for the formation of self-aligned gate and focus ring structures around a cold cathode tip, said process comprising the following steps:
A process for the formation of self-aligned gate and focus ring structures around an electron emitting cold cathode tip, said process comprising the following steps:
Dependencies are inferred from the claim text.