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US 5,184,200 AGranted
Thin film semiconductor device with particular grain size
AssigneeCanon Kabushiki Kaisha
InventorMasato Yamanobe
Life of this patent
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Abstract
A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.
Claims10
A semiconductor device comprising at least:
- an insulative layer;
- a semiconductor layer provided in contact with a first surface of said insulative layer;
- first and second electrodes provided in contact with said semiconductor layer;
- and
- a third electrode provided in contact with a second surface of said insulative layer, said second surface being opposite to said first surface,
- wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.
3 more elements
A photoelectric converting apparatus comprising:
- a semiconductor device having at least an insulative layer having first and second opposed surfaces, a semiconductor layer provided in contact with said first surface of said insulative layer, first and second electrodes provided in contact with said semiconductor layer, and a third electrode provided in contact with said second surface of said insulative layer;
- and
- a photoelectric converting device,
- wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.
1 more element
Dependencies are inferred from the claim text.