State-dependent discharge path circuit
AssigneeNational Semiconductor Corporation
InventorsJames R. Ohannes, Stephen W. Clukey, Ernest D. Haacke, Roy L. Yarbrough
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AssigneeNational Semiconductor Corporation
InventorsJames R. Ohannes, Stephen W. Clukey, Ernest D. Haacke, Roy L. Yarbrough
Estimating the term…
A circuit for use in connection with tristate output buffers in order to provide concurrently for fast discharge of the output pulldown transistor base and at the same time for building in protection against reverse breakdown in the pulldown transistor. The innovation consists of providing a two discharge paths to ground for the base of the output pullup transistor. A low-capacitance path is activated only while the output buffer is in its active mode. In the preferred embodiment of the invention, this low discharge path consists of two CMOS transistors in series, one of which is controlled by the enable signal input E of the buffer circuit and the other by the data signal input V.sub.IN of the buffer circuit. The other path to ground is available whenever the data signal input V.sub.IN is low, regardless of whether the buffer is in its active or inactive mode. This other path provides discharge protection for the base of the pullup transistor for the buffer in its inactive mode, and has incorporated into it reverse breakdown protection in the form of voltage drop devices such as forward-biased diodes.
A state-dependent-discharge-path circuit for discharging a control node of an output pullup transistor of a tristate output buffer, where said tristate output buffer comprises a data signal input and an enable signal input, wherein said data signal input is coupled to a pullup-predriver-inverter-stage, wherein said state-dependent discharge path comprises a first ground link and a second ground link wherein first ground link is coupled between said control node and a low potential power rail and comprises
A BiCMOS tristate output buffer circuit having an active mode of operation for delivering output signals of high and low potential levels at an output V.sub.OUT in response to data signals at a data signal input V.sub.IN and an inactive mode of operation providing a high impedance third state at said output V.sub.OUT, comprising
Dependencies are inferred from the claim text.