Method of driving a thin film transistor type optical sensor and the drive unit
AssigneeCanon Kabushiki Kaisha
InventorsToshihiro Saika, Isao Kobayashi, Noriyuki Kaifu, Tadao Endo
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Abstract
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode. The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.
Claims27
A method of driving a thin film transistor type optical sensor, comprising a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode, said method comprising the step of driving the thin film transistor type optical sensor by providing the gate electrode with one of a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor and a voltage lower than said threshold voltage.
A method of driving a thin film transistor type optical sensor comprising a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode, said method comprising the step of driving the thin film transistor type optical sensor by setting a potential at the gate electrode of the thin film transistor type optical sensor to one of a threshold potential and a potential having a predetermined potential difference from the threshold potential.
A drive unit for a thin film transistor type optical sensor comprising a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode, said drive unit comprising means for setting a potential at the gate electrode to one of a threshold potential and a potential having a predetermined potential difference from the threshold potential and provided by a thin film transistor in which a gate electrode provided near the thin film transistor type optical sensor is connected to a drain electrode.
An image processing device, comprising:
- a thin film transistor type optical sensor comprising a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode;
- and
- a thin film transistor provided near said thin film transistor type optical sensor and comprising a drain electrode, a gate electrode and a source electrode, wherein
- said drain electrode and said gate electrode of said thin film transistor are electrically connected to said gate electrode of said thin film transistor type optical sensor, and wherein a battery is arranged to apply a desired voltage to said source electrode of said thin film type optical sensor.
Dependencies are inferred from the claim text.