Method of fabricating semiconductor device

A method of fabricating a semiconductor device, comprising the steps of:

• forming a semiconductor film on a substrate;
• forming an insulator film to cover said semiconductor film;
• providing on said insulator film an impurity doped semiconductor film having impurities for determining electrical conductivity doped therein;
• and
• irradiating a region of the device with a high-energy beam through said impurity doped semiconductor film, to melt all of said insulator film, said semiconductor film, and said impurity doped semiconductor film in the irradiated region to form a polycrystalline contact region having impurities supplied from the impurity doped semiconductor film doped therein.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a semiconductor film on a substrate;
• forming an insulator film containing no dopant impurities to cover said semiconductor film;
• providing on said insulator film an impurity doped semiconductor film having impurities for determining electrical conductivity doped therein;
• and
• irradiating a region of said device with a high-energy beam through said impurity doped semiconductor film, to melt all of said insulator film, said semiconductor film, and said impurity doped semiconductor film in the irradiated region to form a polycrystalline contact region having impurities supplied from the impurity doped semiconductor film doped therein.

The method of fabricating a semiconductor device, comprising the steps of:

• forming a gate electrode on an insulating substrate;
• forming in order on the gate electrode a gate insulator film, a semiconductor film, and an insulator film;
• providing a dopant source for said insulator film;
• irradiating a region of the device with a high-energy beam through said dopant source to melt both said insulator film, and said semiconductor film in the irradiated region to form a polycrystalline electrical contact region having impurities supplied from the dopant source doped therein.

A method of fabricating a semiconductor device, comprising the steps of;

• forming a gate electrode on an insulating substrate;
• forming on the gate electrode a gate insulator film, a semiconductor film, and an insulator film in this order;
• providing on said insulator film an impurity doped semiconductor film having large numbers of impurities for determining electrical conductivity doped therein;
• irradiating a region of the device with a high-energy beam through said impurity doped semiconductor film, to melt all of said insulator film, said semiconductor film, and said impurity doped semiconductor film in the irradiated region, to form a polycrystalline electrical contact region having impurities supplied from the impurity doped semiconductor film doped therein.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a semiconductor film on a substrate;
• providing an insulator film to cover said semiconductor film;
• proving a dopant source from said insulator film;
• irradiating a region of said device with a high-energy beam through said dopant source to melt said insulator film and said semiconductor film in the irradiated region to form a polycrystalline electrical contact region having impurities supplied from said dopant source doped therein, and
• providing source and drain electrodes on said polycrystalline contact region, respectively, and providing a gate electrode on said insulator film.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a semiconductor film on a substrate;
• providing an insulator film containing no impurities serving as dopant to cover said semiconductor film;
• providing on said insulator film an impurity doped semiconductor film having large numbers of impurities for determining electrical conductivity doped therein;
• irradiating a region of the device with a high-energy beam through said impurity doped semiconductor film to melt said insulator film, said semiconductor film, and said impurity doped semiconductor film in the irradiated region to form a polycrystalline electrical contact region having impurities supplied from the impurity doped semiconductor film doped therein;
• and
• providing source and drain electrodes on said polycrystalline contact region, respectively, and providing a gate electrode on said insulator film.