Method for doping GaAs with high vapor pressure elements
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsBijan Tadayon, Saied Tadayon
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Abstract
A method is disclosed for the incorporation of relatively high vapor pressure elements into good quality GaAs at extremely low T.sub.s using the migration enhanced epitaxy techinque. Zinc was doped in GaAs material grown at a low T.sub.s of 120.degree. C. Zinc may thus be used as a p-type dopant replacing more toxic Be. Similarly, other high vapor pressure elements can be incorporated much more efficiently into the material grown at low T.sub.s.
Claims32
A method of doping a relatively high vapor pressure element into semiconductor materials, said semiconductor materials deposited on a substrate using a molecular beam epitaxy chamber, the method comprising the steps of:
- 1) a first diffusion step of diffusing a first semiconductor material onto said substrate to form a first diffusion layer;
- 2) a second diffusion step, performed after completion of said first diffusion step, of diffusing a second semiconductor material onto said first diffusion layer to form a second diffusion layer;
- 3) a third diffusion step of diffusing said relatively high vapor pressure element onto at least one of said first and second layers;
- and
- 4) heating the substrate to no more than a relatively low temperature during at least said third diffusion step so as to permit said relatively high vapor pressure element to bond to crystal sites of the semiconductor material.
Method for doping a relatively high vapor pressure element into a semiconducting material deposited on a substrate using a molecular beam epitaxy chamber, said material being of good quality compared to that obtained at a conventional high temperature, the method comprising the steps of
- (a) depositing said semiconducting material on a substrate by means of migration enhanced epitaxy, and
- (b) depositing said element in vaporized state on a substrate having a relatively low temperature so that said element bonds to said semiconducting material.
Dependencies are inferred from the claim text.