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US 5,183,778 AGranted
Method of producing a semiconductor device
AssigneeFujitsu Limited
InventorKanetake Takasaki
Life of this patent
Estimating the term…
Abstract
A semiconductor device is produced by forming a crystalline substrate of a first layer of Si and a second layer of GaAs or GaAs-containing compound formed on the first layer, wherein a Ge or Ge-containing crystalline layer is formed as an intervening layer between the second layer and the first layer.
Claims5
A method of producing a semiconductor device, comprising the steps of:
- preparing a Si layer (1);
- forming a first crystalline layer (3a) of GaAs or GaAs-containing compound on said Si layer (1);
- forming a Ge or Ge-containing crystalline layer (4) on said first crystalline layer (3a);
- and
- forming a second crystalline layer (3b) of GaAs or GaAs-containing compound on said Ge or Ge-containing crystalline layer (4).
2 more elements
Dependencies are inferred from the claim text.