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US 5,183,776 AGranted
Heteroepitaxy by growth of thermally strained homojunction superlattice buffer layers
AssigneeTexas Instruments Incorporated
InventorJhang W. Lee
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Abstract
Preferred embodiments disclose include methods of fabrication and integrated circuits (30) in GaAs layers (38, 40) on silicon substrates (32) with the gallium arsenide grown by MBE or MOCVD and containing thermally-strained superlattices (36) and post-growth high temperature annealing to lower defect density. The annealing confines dislocations to a thin network at the interface of the GaAs buffer layer (34) and the silicon substrate (32).
Claims6
A method for heteroepitaxial growth of semiconductors, comprising the steps of:
- (a) providing a substrate of a first semiconductor material;
- (b) growing a first layer of a second semiconductor material on said substrate at a first temperature;
- (c) growing a second layer of said second semiconductor material on said first layer at a second temperature differing from said first temperature;
- (d) growing a third layer of said second semiconductor material on said second layer at said first temperature;
- (e) growing a fourth layer of said second semiconductor material on said third layer at said second temperature;
- (f) said first, second, third, and fourth layers each sufficiently thin to accommodate strain and together forming a strained layer superlattice;
- (g) growing a fifth layer of said second semiconductor material on said superlattice.
4 more elements
Dependencies are inferred from the claim text.