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AssigneeInternational Business Machines Corporation
InventorsHerve Baratte, Joel P. de Souza, Devendra K. Sadana
Estimating the term…
A method and article of manufacture are disclosed comprising substantially increasing the electrical activation and mobility of electrons in a III-V semiconductor material containing minor amounts of oxygen by doping a III-V crystalline material with an n-type dopant and adding or implanting an oxygen reactive element in the III-V material where the doses of dopant and implanted oxygen reactive element are low enough to effect this increase. These doses typically do not exceed about 1E13 cm.sup.-2 and 4.5E12 cm.sup.-2 respecitvely. The added or implanted oxygen reactive element preferably is at a dose less than the n-type dopant. Experimental data indicate that the added or implanted oxygen reactive element acts as a gettering agent to form an oxygen depleted zone between dopant and oxygen reactive element regions.
A method of manufacturing a III-V semiconductor composition containing minor amounts of oxygen as an impurity, comprising placing an n-dopant by ion implantation in said III-V compound in an amount from about 4E12 cm.sup.-2 to less than about 2E13 cm.sup.-2 to form a dopant region and placing an oxygen reactive element by ion implantation in said III-V compound in an amount from about 1.5E12 cm.sup.-2 to about 4.5 E12 cm.sup.-2 to form an oxygen reactive element region so that said regions are separated from one another in said III-V compound.
A method of gettering oxygen from a III-V compound containing minor amounts of oxygen as an impurity comprising placing an n-dopant in said III-V compound to form a dopant region in a space in said III-V compound through which an oxygen reactive element is implanted to form an opposed oxygen reactive element region in said III-V compound, combining said oxygen reactive element with said oxygen to form an oxygen depleted zone between said regions, the space between said regions being sufficient so that oxygen combined with said oxygen reactive element will not substantially interfere with the electrical properties of said dopant, said oxygen reactive element being in a sufficiently low dose so that it will not substantially interfere with the electrical properties of said dopant.
The method of claim 19 further comprising annealing said III-V compound at a temperature greater than about 600.degree. C. to about 1000.degree. C. to maximize carrier speed and sheet carrier dose and minimize surface resistivity after said dopant region and said oxygen reactive element region are ion implanted into said III-V compound.
Dependencies are inferred from the claim text.