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US 5,182,757 AGranted
Surface emission type semiconductor laser
AssigneeSeiko Epson Corporation
InventorsKatsumi Mori, Tatsuya Asaka, Hideaki Iwano
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AssigneeSeiko Epson Corporation
InventorsKatsumi Mori, Tatsuya Asaka, Hideaki Iwano
Estimating the term…
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
A surface emission type semiconductor laser for emitting a laser beam in a direction perpendicular to a semiconductor substrate in which said laser is formed, comprising an optical resonator means including a pair of reflecting mirrors having different reflectivities and a plurality of semiconductor layers between said reflecting mirrors, the semiconductor layers including at least a cladding layer in said semiconductor layers being formed into at least one column-like portion, and a II-VI group compound semiconductor epitaxial layer surrounding said at least one column-like portion.
Dependencies are inferred from the claim text.