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US 5,182,628 AGranted
Semiconductor device having particular solder interconnection arrangement
AssigneeHitachi, Ltd.
InventorsKatsuyoshi Izawa, Ryoichi Kobayashi, Masayuki Ozawa
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Abstract
A semiconductor device which is resistant to cracking during a heat cycle is provided which uses a lead-tin alloy solder having a weight ratio in a range of 45/55 to 55/45 to bond an insulation plate and a heat sink plate of the semiconductor device to one another.
Claims11
A semiconductor device comprising:
- (a) a semiconductor drive element;
- (b) an insulation plate coupled to said semiconductor drive element through a first solder layer having a predetermined relatively high melting point;
- and
- (c) a metallic heat sink plate coupled to said insulation plate through a second solder having a lower melting point than said first solder.
1 more element
A semiconductor device comprising:
- (a) a semiconductor drive element;
- (b) an insulation plate coupled to said semiconductor drive element through a first solder layer having a predetermined relatively high melting point;
- and
- (c) a metallic heat sink plate coupled to said insulation plate through a second solder having a lower melting point than said first solder,
- wherein said second solder has a property of not cracking over substantially 2000 cycles with one cycle comprising being left at -55.degree. C. for one hour and then being left at +150.degree. C. for one hour.
2 more elements
Dependencies are inferred from the claim text.