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US 5,182,495 AGranted
Plasma processing method and apparatus using electron cyclotron resonance
AssigneeHitachi, Ltd.
InventorsTakuya Fukuda, Michio Ohue, Tadasi Sonobe
Life of this patent
Estimating the term…
Abstract
In a plasma processing apparatus using ECR, faces in contact with plasma excepting a substance to be processed are covered by an insulating material. By such configuration, discharge caused between the plasma and the substance to be processed in plasma processing is prevented beforehand.
Claims24
A plasma processing apparatus comprising:
- a container made at least in part of a conductive material for housing a substance to be processed;
- means for generating plasma of a selected component by electron cyclotron resonance in said container;
- means for applying a first alternating current electric field to at least a part of a region of said plasma contained in said container;
- and
- means for covering substantially all of the inner surface areas of said container exposed to said plasma, except for a portion thereof on which the substrate to be processed is located, by a material exhibiting an insulating property at least against said first alternating current electric field.
2 more elements
A plasma processing apparatus comprising:
- a plasma processing chamber made at least in part of a conductive material and having a holder for supporting a substance to be processed therein;
- means for guiding microwave energy into said plasma processing chamber;
- means for guiding a plasma generating gas into said plasma processing chamber;
- means disposed outside of said plasma processing chamber for generating a magnetic field, which is introduced into said plasma processing chamber to generate a plasma from said plasma generating bas by electron cyclotron resonance in cooperation with said microwave energy;
- a high-frequency power supply for supplying a high-frequency electric field to said holder;
- and
- means for insulating substantially all of the inner surface areas of said plasma processing chamber and said holder, which would otherwise be in contact with said plasma, from said plasma.
4 more elements
A plasma processing apparatus comprising:
- a plasma processing chamber made at least in part of a conductive material and having a holder for supporting a substance to be processed therein;
- means for guiding microwave energy into said plasma processing chamber;
- means for guiding a plasma generating gas into said plasma processing chamber;
- means for guiding reaction gas into said plasma processing chamber, said reaction gas reacting with said plasma generating gas;
- means disposed outside of said plasma processing chamber for generating a magnetic field, which is introduced into said plasma processing chamber to generate a plasma from said plasma generating gas by electron cyclotron resonance in cooperation with said microwave energy;
- a high-frequency power supply for supplying a high-frequency electric field to said holder;
- and
- means for insulating substantially all of the inner surface areas of said plasma processing chamber and said holder, which would otherwise be in contact with said plasma, from said plasma.
5 more elements
A plasma processing method comprising the steps of:
- (1) placing a substance to be processed into a plasma processing chamber made at least in part of a conductive material;
- (2) guiding plasma generating gas into said plasma processing chamber to generate a plasma by electron cyclotron resonance;
- and
- (3) bringing said plasma into contact with said substance to be processed while insulating substantially all of the inner surfaces of said chamber from the plasma so as to avoid discharge between said substance to be processed and said plasma.
1 more element
A plasma processing method comprising the steps of:
- (1) placing a substance to be processed into a plasma processing chamber made at least in part of a conductive material;
- (2) guiding plasma generating gas into said plasma processing chamber and applying microwave energy and a magnetic field to said plasma generating gas to generate a plasma by electron cyclotron resonance;
- and
- (3) bringing said plasma into contact with said substance to be processed, while applying a high-frequency electric field to said substance, and insulating substantially all of the inner surfaces of said chamber from the plasma so as to avoid discharge between said substance to be processed and said plasma.
1 more element
A plasma processing method comprising the steps of:
- (1) placing a substance to be processed into a plasma processing chamber made at least in part of a conductive material;
- (2) guiding plasma generating gas into said plasma processing chamber and applying microwave energy and a magnetic field to said plasma generating gas to generate a plasma by electron cyclotron resonance;
- (3) guiding reaction gas for reacting with said plasma generating gas into said plasma processing chamber;
- and
- (4) bringing said plasma into contact with said substance to be processed, while applying a high-frequency electric field to said substance, and insulating substantially all of the inner surfaces of said chamber from the plasma so as to avoid discharge between said substance to be processed and said plasma.
2 more elements
A plasma processing apparatus comprising:
- a plasma processing chamber made at least in part of a conductive material and having a holder for supporting a substance to be processed therein;
- means for guiding microwave energy into said plasma processing chamber and generating a plasma by electron cyclotron resonance;
- a high-frequency power supply for supplying a high-frequency electric field to said holder;
- and
- means for insulating substantially all of the inner surface areas of said plasma processing chamber and said holder, which would otherwise be in contact with said plasma, from said plasma.
2 more elements
Dependencies are inferred from the claim text.