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US 5,182,229 AGranted
Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorSatoshi Arimoto
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Abstract
A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from the film into the compound semiconductor by annealing. Highly controllable diffusion of n type impurities in a high concentration is achieved.
Claims16
A method for diffusing an n type impurity into a III-V compound semiconductor comprising:
- depositing a film consisting of amorphous or polycrystalline selenium directly on and in contact with a III-V compound semiconductor;
- depositing a protection film selected from the group consisting of SiO.sub.2 and silicon nitride directly on said amorphous or polycrystalline film of selenium;
- and
- diffusing selenium from said amorphous or polycrystalline film into said III-V compound semiconductor by annealing.
1 more element
A method for diffusing an n type impurity into a III-V compound semiconductor comprising:
- depositing a film consisting of amorphous or polycrystalline sulfur directly on and in contact with a III-V compound semiconductor;
- depositing a protection film selected from the group consisting of SiO.sub.2 and silicon nitride directly on said amorphous or polycrystalline film of sulfur;
- and
- diffusing sulfur from said amorphous or polycrystalline film into said III-V compound semiconductor by annealing.
1 more element
Dependencies are inferred from the claim text.