Method of manufacturing a semiconductor light-emitting device
AssigneeOMRON Corporation
InventorsHiroshi Sekii, Koichi Imanaka
Life of this patent
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Abstract
In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.
Claims15
A method of manufacturing a semiconductor light-emitting device, comprising the steps of:
- forming a ridge on a semiconductor wafer;
- forming a buried layer consisting of a high-resistance semiconductor material around and on said ridge so as to bury said ridge;
- removing said buried layer at a location overlaying said ridge until a top surface of said ridge is exposed;
- and
- forming an electrode on an entirety of said exposed top surface of said ridge and a top surface of said buried layer surrounding said ridge.
Dependencies are inferred from the claim text.