Process for producing high density SiC sintered bodies
AssigneeNGK Insulators, Ltd.
InventorsShinji Kawasaki, Masaharu Kajita, Keiji Matsuhiro
Life of this patent
Estimating the term…
Loading patent…
AssigneeNGK Insulators, Ltd.
InventorsShinji Kawasaki, Masaharu Kajita, Keiji Matsuhiro
Estimating the term…
A process for producing high density SiC sintered bodies by primarily firing and then hot isostatic pressing. The process includes the steps of formulating a powder consisting essentially of 90.0 to 99.8% by weight of the SiC powder, boron or a boron-containing compound in an amount of 0.1 to 5.0% by weight when calculated as boron, and carbon or a carbon-producing organic compound in an amount of 0.1 to 5.0% by weight when calculated as carbon, mixing and shaping the formulated powder, firing the shaped bodies in a temperature range from 1,900.degree. to 2,300.degree. C. in vacuum or in an inert gas atmosphere, and then hot isostatically pressing the fired bodies in a temperature range from 1,800.degree. to 2,200.degree. C. under a pressure of not less than 100 atms in an inert gas atmosphere. The SiC powder is an SiC mixed powder consisting essentially of 95.0 to 99.9% by weight of a first SiC powder composed of at least one kind of 3C and 2H polytypes and a second SiC powder composed of at least one kind of 6H, 4H and 15R polytypes and having an average grain diameter being less than twice that of the first SiC powder.
A method of producing high density SiC sintered bodies, comprising the steps of:
Dependencies are inferred from the claim text.