Low power voltage sensing circuit
AssigneeSilicon Storage Technology, Inc.
InventorChing S. Jenq
Life of this patent
Estimating the term…
Loading patent…
AssigneeSilicon Storage Technology, Inc.
InventorChing S. Jenq
Estimating the term…
A voltage sensing circuit receives an input voltage signal and generates an output voltage signal. The circuit has a sensing node. A first P-type MOS transistor is connected having one of its ends to receive the input voltage signal with the other end connected to the sensing node to provide a sensing signal. A first voltage source is connected to the gate of the first P-type transistor. A voltage dropping circuit receives the input voltage signal and generates a first drop voltage signal lower than the input voltage signal. A second P-type MOS transistor has one end connected to receive the first drop voltage signal. The first voltage source is also connected to the gate of the second P-type MOS transistor. A third N-type MOS transistor has a gate connected to the other end of the second P-type MOS transistor. The third N-type MOS transistor has one of its ends connected to the sensing node. A second voltage source is connected to the other end of the third N-type MOS transistor. A driving circuit comprising of an inverter is connected to the sensing node for receiving the sensing signal and for producing the output voltage signal in response thereto.
A voltage sensing circuit, for receiving an input voltage signal and for generating an output voltage signal, said circuit comprising:
In a single integrated circuit module having an electrically non-volatile memory array storing data, and a programming control logic circuit for controlling the programming of said memory array, wherein the improvement comprising:
Dependencies are inferred from the claim text.