Method and apparatus for measuring ion beam collimation, shaping the ion beam and controlling scanning thereof
AssigneeNissin Electric Co., Ltd.
InventorMichiro Isobe
Life of this patent
Estimating the term…
Abstract
A method of measuring collimation of an ion beam used for electrostatically-controlled collimated scanning includes the steps of electrically detecting the ion beam to determine the time-dependent change in the scanning position of the ion beam both at an upstream location and at a downstream location of the ion beam, determining upstream and downstream positions of the ion beam at mutually corresponding times based on the time-dependent change determination, and determining the degree of collimation of the ion beam based on the relationship between the upstream and downstream positions.
Claims11
A method of measuring collimation of an ion beam used for electrostatically-controlled collimated scanning, said ion beam being emitted from an ion beam source, and said method comprising the steps of:
- electrically detecting the ion beam at a first location and at a second location to determine a time-dependent change in a scanning position of the ion beam at both the first location and the second location, the first location being closer to the ion beam source than the second location;
- determining positions of the ion beam at the first and second locations at mutually corresponding times based on the time-dependent change determination;
- and
- determining a degree of collimation of the ion beam based on a relationship between the positions of the ion beam at the first and second locations.
A method of shaping a scanning waveform controlling an ion beam used for electrostatically-controlling collimated scanning, said ion beam being emitted from an ion beam source, and said method comprising the steps of:
- electrically detecting the ion beam at a first location and a second location to determine a time-dependent change in a scanning position of the ion beam at both the first location and the second location, the first location being closer to the ion beam source than the second location;
- determining, based on the time-dependent change determination, a time-dependent change in a scanning position of the ion beam on a target in accordance with a relationship between measured positions of the ion beam at the first and second locations and a position of the target;
- and
- shaping the scanning waveform controlling the ion beam such that when the ion beam is being scanned over the target, the time-dependent change in the scanning position of the ion beam on the target will be constant.
An ion implanter for performing electrostatically-controlled collimated scanning using an ion beam emitted from an ion beam source, said implanter comprising a first multipoint beam monitor location at a first location and a second multipoint monitor location at a second location, the first location being closer to the ion beam source than the second location, said monitors each comprising a plurality of beam detecting points positioned so that each monitor has the same set of detecting point coordinate values in a scanning direction of the ion beam for electrically detecting the ion beam, and the positions of the beam detecting points being predetermined.
An ion implanter for performing electrostatically-controlled collimated scanning of a target using an ion beam, said implanter comprising a first multibeam monitor located at a first location and a second multipoint monitor located at a second location, the target being located between the first and second locations, said monitors each comprising a plurality of beam detecting points positioned so that each monitor has the same set of detecting point coordinate values in a scanning direction of the ion beam for electrically detecting the ion beam, and the positions of the beam detecting points being predetermined.
Dependencies are inferred from the claim text.