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US 5,180,692 AGranted
Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride
AssigneeTokyo Electron Limited
InventorsShigehito Ibuka, Hideki Lee
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Abstract
This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.
Claims6
A method for manufacturing boron-containing films, comprising the steps of:
- arranging a plurality of semiconductor wafers on a wafer boat such that the surfaces of said wafers to be processed for forming films thereon are exposed;
- housing said wafer boat in a process tube made of quartz;
- exhausting the inside of said process tube to form a vacuum therein;
- heating said wafers in said process tube in a range of 350.degree. C.-430.degree. C.;
- introducing a reaction gas composed of BF.sub.3, Si, P and O into said process tube, said reaction gas containing a BF.sub.3 gas component of 5.482-19.187 SCCM per square meter of unit surface area of a wafer to be processed;
- allowing said reaction gas to directly react with said wafers;
- and
- forming borophosphosilicate glass films having resistance to humidity absorption, on said wafers.
5 more elements
Dependencies are inferred from the claim text.