Method of manufacturing a semiconductor device sealed with molding resin employing a stress buffering film of silicone

Abstract

The disclosed is a method of manufacturing a semiconductor device sealed with molding resin. An aluminum interconnection including an aluminum electrode pad is formed on a semiconductor substrate having an element. A silicone ladder polymer expressed by the following general formula is formed on the semiconductor substrate to cover the element. The silicone ladder polymer film is selectively etched by an aromatic organic solvent to expose the surface of the aluminum electrode pad. The temperature of the silicone ladder polymer film is elevated at a temperature elevating rate of 20.degree. C./min or more, and then, the silicone ladder polymer film is cooled at a cooling rate of 20.degree. C./min or more to form a cured stress buffering protective film for buffering a stress applied to the element. ##STR1## (in the formula, n is an integer which makes the weight-average molecular weight be in the range of 100,000 to 200,000.)

Dependencies are inferred from the claim text.