Electron beam-curable resist composition and method for fine patterning using the same
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsMasanori Miyabe, Hidekatsu Kohara, Toshimasa Nakayama
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsMasanori Miyabe, Hidekatsu Kohara, Toshimasa Nakayama
Estimating the term…
An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.
A method for patterning a resist layer by using an electron beam-curable resist composition which comprises the steps of:
Dependencies are inferred from the claim text.