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US 5,180,468 AGranted
Method for growing a high-melting-point metal film
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang-Ok Ko, Jong-Ho Park
Life of this patent
Estimating the term…
Abstract
There is disclosed a process for growing a high-melting-point metal film comprising the steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.
Claims13
A method for growing a high-melting-point metal film, comprising the steps of:
- forming a first ion-implanted layer in a given region of a silicon substrate, and forming in said first ion-implanted layer a second ion-implanted layer;
- contacting a surface of said second ion-implanted layer with a gas of fluoride and a high melting point metal to adhere a film of said high-melting-point metal to the surface;
- growing said high-melting-point metal film to a given thickness by reacting the gas of said high-melting-point metal fluoride with silane gas;
- and
- subjecting said silicon substrate to a heat treatment;
- repeating, alternatively, said high-melting-point metal film growing step and said step of subjecting said silicon substrate to a heat treatment.
3 more elements
A method for growing a high-melting-point metal film comprising the steps of:
- forming a first ion-implanted layer in a given region of a silicon substrate, over which an insulating layer is deposited;
- selectively etching said insulating layer to form a contacting aperture through which a portion of said first ion-implanted layer is exposed;
- forming on a surface of said first ion-implanted layer a second ion-implanted layer having surface imperfection by ion-implantation of a given impurity through said contacting aperture;
- contacting tungsten fluoride gas with said second ion-implanted layer through said contacting aperture to grow a film of tungsten and reduce the silicon on the surface of said section ion-implanted layer;
- pyrolyzing the tungsten fluoride gas and a silane gas, having the ration of three to two, respectively, through said contacting aperture for 45-90 seconds at a temperature between 280.degree. and 300.degree. C., so as to grow a tungsten film having the thickness of 1,500-3,000.ANG.;
- and
- subjecting said silicon substrate to a heat treatment for two minutes at the temperature of about 450.degree. C.;
- whereby said step of pyrolyzing the tungsten fluoride and silane gases and said step of subjecting said silicon substrate to a heat treatment are alternatively repeated.
5 more elements
A process for forming a metal film, comprising the steps of:
- forming a first ion-implanted layer within a region of a silicon semiconductor;
- forming a second ion-implanted layer within said first ion-implanted layer;
- exposing a surface of said second ion-implanted layer to a gaseous phase of a fluoride and refractory metal composition to cause a reduction of silicon of said surface and form a film of said refractory metal on the surface;
- growing said refractory metal film to successively increasing thicknesses by reacting a mixture of said fluoride and refractory metal composition with silane gas in the presence of said refractory metal film;
- annealing said silicon substrate;
- and
- repeating said step of growing said refractory metal film to successively increasing thicknesses and said step of annealing said silicon substrate until said refractory metal film is grown to a selected thickness.
4 more elements
A process for forming a metal film, comprising the steps of:
- forming a first ion-implanted layer within a region of a silicon semiconductor;
- forming an insulating layer over said first ion-implanted layer;
- etching an opening through said insulating layer to expose said first ion-implanted layer before forming a second ion-implanted layer;
- forming said second ion-implanted layer within said first ion-implanted layer;
- exposing a surface of said second ion-implanted layer to a gaseous phase of a fluoride and refractory metal composition to cause a reduction on silicon of said surface and form a film of said refractory metal on the surface;
- growing said refractory metal film to successively increasing thicknesses by reacting a mixture of said fluoride and refractory metal composition with silane gas in the presence of said refractory metal film;
- annealing said silicon substrate;
- and
- repeating said step of growing said refractory metal film to successively increasing thicknesses and said step of annealing said silicon substrate until said refractory metal film is grown to a selected thickness.
6 more elements
A process for forming a metal film, comprising the steps of:
- forming a first ion-implanted layer within a region of a silicon semiconductor;
- forming a second ion-implanted layer within said first ion-implanted layer;
- exposing a surface of said second ion-implanted layer to a gaseous phase of a fluoride and refractory metal composition to cause a reduction of silicon of said surface and form a film of said refractory metal on the surface;
- growing said refractory metal film to successively increasing thicknesses by reacting a mixture of said fluoride and refractory metal composition with silane gas, with a ratio of about three to two between said composition and said silane gas, in the presence of said refractory metal film;
- annealing said silicon substrate;
- and
- repeating said step of growing said refractory metal film to successively increasing thicknesses and said step of annealing said silicon substrate until said refractory metal film is grown to a selected thickness.
4 more elements
A process for forming a metal film, comprising the steps of:
- forming a first ion-implanted layer within a region of a silicon semiconductor;
- forming an insulating layer over said first ion-implanted layer;
- etching an opening through said insulating layer to expose said first ion-implanted layer before forming a second ion-implanted layer;
- forming said second ion-implanted layer within said first ion-implanted layer;
- exposing a surface of said second ion-implanted layer to a gaseous phase of a fluoride and refractory metal composition to cause a reduction of silicon of said surface and form a film of said refractory metal on the surface;
- growing said refractory metal film to successively increasing thickness by reacting a mixture of said fluoride and refractory metal composition with silane gas, with a ratio of about three to two between said composition and said silane gas, in the presence of said refractory metal film;
- annealing said silicon substrate;
- and
- repeating said step of growing said refractory metal film to successively increasing thicknesses and said step of annealing said silicon substrate until said refractory metal film is grown to a selected thickness.
6 more elements
Dependencies are inferred from the claim text.